Single-layer antireflection coating of semiconductor lasers: polarization properties and the influence of the laser structure

Theoretical calculations of the modal reflectance of semiconductor laser facets, giving conditions for the coating index and thickness for a prescribed modal reflectance for TE and TM polarized light, are presented. A simplified method of calculating the modal reflectance is suggested and compared to a more exact method as well as to two other published methods. The possibilities of simultaneously achieving low reflectance for both polarizations are investigated with reference to the laser structure. >