论文信息 - An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis

An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis

Abstract The formation of conductive percolation path in high-κ (HK)/interfacial layer (IL) dielectric stack is accompanied by dynamic changes in the electrical and chemical properties at the nanometer length scale. It is therefore essential to study these breakdown (BD) events using high-precision nanoscale characterization tools to investigate the physical mechanisms of failure for advanced HK dielectric based devices. In this work, we carry out a new method for electrical nanoprobing of HfO2/SiOx (x

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