An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis
暂无分享,去创建一个
Nagarajan Raghavan | Michel Bosman | Kin Leong Pey | Alok Ranjan | Kalya Shubhakar | Sean J. O'Shea | O. A. Neucheva | Y. C. Loke | R. Thamankar
[1] A. Wiessner,et al. Design considerations and performance of a combined scanning tunneling and scanning electron microscope , 1997 .
[2] Marc Porti,et al. Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution , 2007 .
[3] Nagarajan Raghavan,et al. Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics , 2013 .
[4] Kin Leong Pey,et al. Breakdowns in high-k gate stacks of nano-scale CMOS devices , 2005 .
[5] Hiroshi Iwai,et al. Bilayer gate dielectric study by scanning tunneling microscopy , 2007 .
[6] Hiroki Hibino,et al. Ultrahigh vacuum scanning electron microscope system combined with wide-movable scanning tunneling microscope , 2005 .