论文信息 - Erbium-doped waveguides fabricated with atomic layer deposition method - 字舞流文

Erbium-doped waveguides fabricated with atomic layer deposition method

Ieee Photonics | Ieee Photonics

[1] Morio Kobayashi,et al. Guided-wave laser based on erbium-doped silica planar lightwave circuit , 1991 .

[2] Yoshinori Namihira,et al. Comparison of various polarisation mode dispersion measurement methods in optical fibres , 1992 .

[3] T. Kitagawa,et al. Erbium-doped phosphosilicate glass waveguide amplifier fabricated by PECVD , 1993 .

[4] T. Kitagawa,et al. Erbium-doped silica-based waveguide amplifier integrated with a 980/1530 nm WDM coupler , 1994 .

[5] Mk Meint Smit,et al. Upconversion in Er-implanted Al2O3 waveguides , 1996 .

[6] M. Ritala,et al. Introducing atomic layer epitaxy for the deposition of optical thin films , 1996 .

[7] Albert Polman,et al. Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 µm , 1997 .

[8] J.-M.P. Delavaux,et al. Net gain of 27 dB with a 8.6-cm-long Er/Yb-doped glass-planar-amplifier , 1998 .

[9] Eric M. Yeatman,et al. Sol-gel silica/titania-on-silicon Er/Yb-doped waveguides for optical amplification at 1.5 μm , 1999 .

[10] L. Niinisto. Advanced thin films for electronics and opto-electronic's by atomic layer epitaxy , 2000, 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486).