Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power

Manuscript received January 21, 1999. Manuscript revised April 9, 1999. † The authors are with the High Frequency & Optical Semiconductor Div., Mitsubishi Electric Corporation, Itami-shi, 6648641 Japan. †† The authors are with the Department of Physics and Electronics, College of Engineering, Osaka Prefecture University, Sakai-shi, 599-8531 Japan. a) E-mail: kashiwa@lsi.melco.co.jp IEICE TR NS. ELECTRON., VOL. E82-C, NO. 10 OCTOBE 1999

[1]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[2]  Herbert Zirath,et al.  An F-band resistive mixer based on heterostructure field effect transistor technology , 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.

[3]  Hiroyuki Minami,et al.  A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching , 1995 .

[4]  A. Colquhoun,et al.  A fully monolithic integrated 60 GHz receiver , 1989, 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium.

[5]  C. Ngo,et al.  A comparison of W-band MMIC mixers using InP HEMT technology , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[6]  Herbert Zirath,et al.  A HFET millimeterwave resistive mixer , 1992, 1992 22nd European Microwave Conference.

[7]  I.D. Robertson,et al.  Fully integrated Q-band MMIC transmitter and receiver chips using resistive PHEMT mixers , 1998, 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182).

[8]  S. Maas.  A GaAs MESFET Mixer with Very Low Intermodulation , 1987 .

[9]  S. Peng.  A simplified method to predict the conversion loss of FET resistive mixers , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[10]  H. Minami,et al.  Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs , 1991 .

[11]  T. Gokdemir,et al.  Fully integrated Q-band MMIC transmitter and receiver chips using resistive PHEMT mixers , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[12]  G. Ebert,et al.  A monolithic 60 GHz diode mixer in FET compatible technology , 1989, Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[13]  Herbert Zirath,et al.  A 40 GHz integrated quasi optical slot HFET mixer , 1994 .

[14]  L. Verweyen,et al.  A GaAs HEMT MMIC Chip Set For Automotive Radar Systems Fabricated By Optical Stepper Lithography , 1997, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[15]  Keiichi Ohata,et al.  60 GHz-band ultra-miniature monolithic T/R modules for multimedia wireless communication systems , 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

[16]  U.K. Mishra,et al.  A 30-GHz monolithic single balanced mixer with integrated dipole receiving element , 1985, IEEE Transactions on Electron Devices.

[17]  W. H. Ku,et al.  Device considerations and modeling for the design of an InP-based MODFET millimeter-wave resistive mixer with superior conversion efficiency , 1995 .