Influences of Connecting Unit Architecture on the Performance of Tandem Organic Light‐Emitting Devices

The present work investigates the influence of the n-type layer in the connecting unit on the performance of tandem organic light-emitting devices (OLEDs). The n-type layer is typically an organic electron-transporting layer doped with reactive metals. By systematically varying the metal dopants and the electron-transporting hosts, we have identified the important factors affecting the performance of the tandem OLEDs. Contrary to common belief, device characteristics were found to be insensitive to metal work functions, as supported by the ultraviolet photoemission spectroscopy results that the lowest unoccupied molecular orbitals of all metal-doped n-type layers studied here have similar energy levels. It suggests that the electron injection barriers from the connecting units are not sensitive to the metal dopant used. On the other hand, it was found that performance of the n-type layers depends on their electrical conductivities which can be improved by using an electron-transporting host with higher electron mobility. This effect is further modulated by the optical transparency of constituent organic layers. The efficiency of tandem OLEDs would decrease as the optical transmittance decreases.

[1]  Ching Wan Tang,et al.  Interface engineering in preparation of organic surface-emitting diodes , 1999 .

[2]  Shui-Tong Lee,et al.  Electronegativity model for barrier formation at metal/organic interfaces , 2005 .

[3]  Tetsuo Tsutsui,et al.  Electric field-assisted bipolar charge spouting in organic thin-film diodes , 2004 .

[4]  Chun-Sing Lee,et al.  Effective organic-based connection unit for stacked organic light-emitting devices , 2006 .

[5]  Zakya H. Kafafi,et al.  Energy level evolution at a silole/magnesium thin-film interface , 2003 .

[6]  Chun-Sing Lee,et al.  Efficient CsF/Yb/Ag cathodes for organic light-emitting devices , 2003 .

[7]  Jenn‐Fang Chen,et al.  Highly efficient white organic electroluminescent devices based on tandem architecture , 2005 .

[8]  Yang Yang,et al.  Effective connecting architecture for tandem organic light-emitting devices , 2005 .

[9]  Shui-Tong Lee,et al.  INTERFACIAL ELECTRONIC STRUCTURES IN AN ORGANIC LIGHT-EMITTING DIODE , 1999 .

[10]  Shui-Tong Lee,et al.  Impact of the metal cathode and CsF buffer layer on the performance of organic light-emitting devices , 2004 .

[11]  W. R. Salaneck,et al.  Interfacial chemistry of Alq3 and LiF with reactive metals , 2001 .

[12]  Voltage reduction in organic light-emitting diodes , 2001 .

[13]  Stephen R. Forrest,et al.  White Stacked Electrophosphorescent Organic Light‐Emitting Devices Employing MoO3 as a Charge‐Generation Layer , 2006 .

[14]  J. Brédas,et al.  Occupied and unoccupied electronic levels in organic π-conjugated molecules: comparison between experiment and theory , 2000 .

[15]  Jun Endo,et al.  27.5L: Late‐News Paper: Multiphoton Organic EL device having Charge Generation Layer , 2003 .

[16]  Stephen R. Forrest,et al.  Electroluminescence from trap‐limited current transport in vacuum deposited organic light emitting devices , 1994 .

[17]  Shui-Tong Lee,et al.  Interfaces between 8-hydroxyquinoline aluminum and cesium as affected by their deposition sequences , 2003 .

[18]  Shui-Tong Lee,et al.  Transient electroluminescence measurements on electron-mobility of N-arylbenzimidazoles , 2001 .

[19]  Tetsuo Tsutsui,et al.  High electron mobility in bathophenanthroline , 2000 .

[20]  Ching Wan Tang,et al.  High-efficiency tandem organic light-emitting diodes , 2004 .