Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs
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Kenji Fukuda | Hajime Okumura | Manabu Takei | Manabu Arai | Hiroyuki Fujisawa | Yoshiyuki Yonezawa | Tadayoshi Deguchi | Kensuke Takenaka | K. Fukuda | H. Okumura | Y. Yonezawa | K. Takenaka | H. Fujisawa | T. Deguchi | M. Takei | M. Arai | Shuji Katakami | Hitoshi Ishimori | Shinji Takasu | S. Katakami | H. Ishimori | S. Takasu