论文信息 - Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes

Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes

Current and temperature dependences of the electroluminescence of InGaN UV/blue/green single-quantum-well (SQW)-structure light-emitting diodes (LEDs) were studied. The emission mechanism of InGaN SQW-structure LEDs with emission peak wavelengths longer than 375 nm is dominated by carrier recombination at large localized energy states caused by In composition fluctuation in the InGaN well layer. When the emission peak wavelength becomes shorter than 375 nm, the conventional band-to-band emission mechanism becomes dominant due to poor carrier localization resulting from small In composition fluctuations. In addition, the quantum-confined Stark effect due to the piezoelectric field becomes dominant, which causes a low output power of the UV LEDs.

S. Nakamura | M. Yamada | T. Mukai

[1] J. Im,et al. Reduction of oscillator strength due to piezoelectric fields in G a N / A l x Ga 1 − x N quantum wells , 1998 .

[2] Isamu Akasaki,et al. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells , 1997 .

[3] Shuji Nakamura,et al. Recombination dynamics of localized excitons in In 0.20 Ga 0.80 N- In 0.05 Ga 0.95 N multiple quantum wells , 1997 .

[4] H. Amano,et al. Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device , 1995 .

[5] Takashi Mukai,et al. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes , 1995 .