Defect Control in Growth and Processing of 4H-SiC for Power Device Applications

Extended defects and deep levels generated during epitaxial growth of 4H-SiC and device processing have been reviewed. Three types in-grown stacking faults, (6,2), (5,3), and (4,4) structures, have been identified in epilayers with a density of 1-10 cm-2. Almost all the major deep levels present in as-grown epilayers have been eliminated (< 1x1011 cm-3) by two-step annealing, thermal oxidation at 1150-1300oC followed by Ar annealing at 1550oC. The proposed two-step annealing is also effective in reducing various deep levels generated by ion implantation and dry etching. The interface properties and MOSFET characteristics with several gate oxides are presented. By utilizing the deposited SiO2 annealed in N2O at 1300oC, a lowest interface state density and a reasonably high channel mobility for both n- and p-channel MOSFETs with an improved oxide reliability have been attained.

[1]  T. Kimoto,et al.  Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment , 2009 .

[2]  T. Kimoto,et al.  Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC , 2009 .

[3]  Tsunenobu Kimoto,et al.  Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation , 2009 .

[4]  T. Kimoto,et al.  Triple Shockley type stacking faults in 4H-SiC epilayers , 2009 .

[5]  Peter Friedrichs,et al.  Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO , 2009 .

[6]  H. Tsuchida,et al.  Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing , 2009 .

[7]  Y. Hijikata,et al.  A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon , 2009 .

[8]  K. Lew,et al.  Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions , 2009 .

[9]  M. Paisley,et al.  100 mm 4HN-SiC Wafers with Zero Micropipe Density , 2008 .

[10]  G. Duscher,et al.  Transition layers at the SiO2∕SiC interface , 2008 .

[11]  T. Kimoto,et al.  Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping , 2008 .

[12]  H. Tsuchida,et al.  Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth , 2008 .

[13]  J. Sumakeris,et al.  Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy , 2007 .

[14]  T. Kimoto,et al.  Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition , 2007 .

[15]  Hidekazu Tsuchida,et al.  Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching , 2007 .

[16]  B. Hull,et al.  Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices , 2007 .

[17]  T. Kimoto,et al.  Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers , 2007 .

[18]  Tsunenobu Kimoto,et al.  Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation , 2007 .

[19]  T. Kimoto,et al.  Impacts of growth parameters on deep levels in n-type 4H-SiC , 2007 .

[20]  Hidekazu Tsuchida,et al.  Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation , 2007 .

[21]  T. Kimoto,et al.  Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons , 2006 .

[22]  H. Matsunami,et al.  Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing , 2006 .

[23]  Kenji Fukuda,et al.  Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers , 2006 .

[24]  B. V. Shanabrook,et al.  Lifetime-limiting defects in n− 4H-SiC epilayers , 2006 .

[25]  H. Matsunami,et al.  Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes , 2005 .

[26]  Tsunenobu Kimoto,et al.  Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation , 2005 .

[27]  H. Tsuchida,et al.  Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates , 2005 .

[28]  H. Kinoshita,et al.  Nondestructive characterization of dislocations and micropipes in high-resistivity 6H–SiC wafers by deep-level photoluminescence mapping , 2005 .

[29]  Marek Skowronski,et al.  Structure of the carrot defect in 4H-SiC epitaxial layers , 2005 .

[30]  A. Henry,et al.  Deep levels created by low energy electron irradiation in 4H-SiC , 2004 .

[31]  Marek Skowronski,et al.  Dislocation conversion in 4H silicon carbide epitaxy , 2002 .

[32]  N. Kobayashi,et al.  Difference of secondary defect formation by high energy B+ and Al+ implantation into 4H–SiC , 2002 .

[33]  O. W. Holland,et al.  Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide , 2001, IEEE Electron Device Letters.

[34]  H. Lendenmann,et al.  Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes , 2001 .

[35]  Anant K. Agarwal,et al.  Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC , 2000 .

[36]  Tsunenobu Kimoto,et al.  Performance limiting surface defects in SiC epitaxial p-n junction diodes , 1999 .

[37]  V. Afanas’ev,et al.  Intrinsic SiC/SiO2 Interface States , 1997 .

[38]  Tsunenobu Kimoto,et al.  Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy , 1997 .

[39]  H. B. Harrison,et al.  Nitridation of silicon-dioxide films grown on 6H silicon carbide , 1997, IEEE Electron Device Letters.

[40]  J. Bergman,et al.  Deep level defects in electron-irradiated 4H SiC epitaxial layers , 1997 .

[41]  K. Taniguchi,et al.  Theoretical model for self‐interstitial generation at the Si/SiO2 interface during thermal oxidation of silicon , 1989 .

[42]  W. Marsden.  I and J , 2012 .

[43]  A. Henry,et al.  Pseudodonor nature of the DI defect in 4H-SiC , 2001 .