InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure

The light output of InGaN/GaN light-emitting diodes (LEDs) was improved by introducing a current blocking hole between the n-type and p-type bonding pads. The injected current was forced to spread out instead of directly passing along the nearest path between the p-type and n-type bonding pads. The light output of the LED with a current blocking hole at 20 mA was 7.2% higher than that of the conventional LED. The forward voltage of the LED with the blocking hole was 3.29 V at 20 mA, which is slightly higher than that of the conventional LED (3.26 V). LEDs with different current blocking hole sizes were also studied.