论文信息 - Chemical deposition of PAsxNy films onto III–V compound semiconductors - 字舞流文

Chemical deposition of PAsxNy films onto III–V compound semiconductors

M. Minakata | E. Yamaguchi | Y. Hirota

[1] Takeshi Kobayashi,et al. Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal‐insulator‐semiconductor devices , 1982 .

[2] Takayuki Kobayashi,et al. Inversion-mode InP MISFET employing phosphorus-nitride gate insulator , 1982 .

[3] T. Mimura,et al. High mobility of two‐dimensional electrons at the GaAs/n‐AlGaAs heterojunction interface , 1980 .

[4] Takeshi Kobayashi,et al. Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique , 1980 .

[5] I. Lindau,et al. Unified defect model and beyond , 1980 .

[6] I. Lindau,et al. New and unified model for Schottky barrier and III–V insulator interface states formation , 1979 .

[7] W. Wiegmann,et al. Two‐dimensional electron gas at differentially doped GaAs–AlxGa1−xAs heterojunction interface , 1979 .

[8] D. Tsui,et al. Observation of two‐dimensional electrons in LPE‐grown GaAs‐AlxGa1−xAs heterojunctions , 1979 .

[9] R. Dingle,et al. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices , 1978 .

[10] W. L. Jolly,et al. Phosphorus 2p electron binding energies. Correlation with extended Hueckel charges , 1970 .