论文信息 - First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists

First demonstration of InAlAs/InGaAs HEMTs using T-gates fabricated by a bilayer of UVIII and PMMA resists

We report the first lattice matched InP HEMTs fabricated using a T-gate process based on a bilayer of Shipley UVIII DUV resist and PMMA. A DC gate resistance of 220 /spl Omega//mm was achieved, leading to f/sub T/ of 193 GHz and Maximum Available Gain (MAG) values of 13 dB at 94 GHz for 100 /spl mu/m wide devices.

[1] P. Chao,et al. 0.2 Micron length T-shaped gate fabrication using angle evaporation , 1983, IEEE Electron Device Letters.

[2] M. Matsumura,et al. Submicrometre lift-off line with T-shaped cross-sectional form , 1981 .

[3] Stephen Thoms,et al. Electron beam lithography process for T- and Γ-shaped gate fabrication using chemically amplified DUV resists and PMMA , 1999 .

[4] P. Chao,et al. A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT , 1991 .

[5] Douglas Macintyre,et al. Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA , 1999 .