Optimization of SiGe bandgap-based circuits for up to 300 °C operation

Abstract An investigation of the performance and reliability issues associated with operating silicon–germanium (SiGe) devices and circuits at temperatures up to 300 °C is presented, along with a new bypass compensation technique for optimizing bandgap reference performance at these extreme temperatures. In addition to the device-level characterization of a SiGe BiCMOS platform, improved circuit design and a device-level collector–substrate leakage suppression technique are shown to improve the viability of SiGe bandgap reference (BGR) circuits on low-cost, bulk Si wafers for high temperature applications. A shunting technique using various transistors to further improve BGR performance above 200 °C is presented, and optimized compensation designs predict new performance records for a bulk-silicon based technology across temperatures from −200 °C to 300 °C. Finally, a closely-related SiGe temperature sensor circuit is characterized for operating environments up to 300 °C.

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