Single-mode distributed feedback and microlasers based on quantum-dot gain material

Quantum-dot gain material fabricated by self-organized epitaxial growth on GaAs substrates is used for the realization of 980-nm and 1.3-/spl mu/m single-mode distributed feedback (DFB) lasers and edge-emitting microlasers. Quantum-dot specific properties such as low-threshold current, broad gain spectrum, and low-temperature sensitivity could be demonstrated on ridge waveguide and DFB lasers in comparison to quantum-well-based devices. 980-nm DFB lasers exhibit stable single-mode behavior from 20/spl deg/C up to 214/spl deg/C with threshold currents 1 mW was obtained for 30-/spl mu/m cavity length. Low-threshold currents of 4.4 mA could be obtained for 1.3-/spl mu/m emitting 400-/spl mu/m-long high-reflection coated ridge waveguide lasers. DFB lasers made from this material by laterally complex coupled feedback gratings show stable CW single-mode emission up to 80/spl deg/C with sidemode suppression ratios exceeding 40 dB.

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