High-field, nonlinear electron transport in lightly doped Schottky-barrier diodes

Abstract The high-field transport of electrons in an n -type Schottky barrier diode is analyzed in relation to the existing synthesis of drift-diffusion (DD) and thermionic emission (TE) theories. Energy relaxation is shown to play a significant role in allowing the DDTE theory to encompass as wide an applicability as it does in spite of its underlying assumptions. The transport equations for energy and momentum balance are solved for the electrostatic potential distribution of a Schottky diode while including quasi-ballistic effects of the inertia of the energy and momentum fluxes. Relaxation of both momentum and energy is included through scattering with ionized impurities, acoustic phonons and optical phonons. The model is applied to a silicon Schottky barrier and the results related to the existing theories.

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