Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model
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P. Asbeck | Mark J. W. Rodwell | Nobuyuki Sano | Massimo V. Fischetti | Y. Taur | Seonghoon Jin | Ting-Wei Tang | Steven E. Laux
[1] M. Fischetti. Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport , 1991 .
[2] G. Ghibaudo,et al. Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling , 2006, 2006 International Electron Devices Meeting.
[3] M. Lundstrom,et al. Physics of Carrier Backscattering in One- and Two-Dimensional Nanotransistors , 2009, IEEE Transactions on Electron Devices.
[4] S. Laux,et al. Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability , 2001 .
[5] M. A. Islam,et al. Einstein–Smoluchowski Diffusion Equation: A Discussion , 2004 .
[6] A. G. Rojo,et al. Electron-drag effects in coupled electron systems , 1999, cond-mat/9902050.
[7] I. Eisele,et al. Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs , 2001, IEEE Electron Device Letters.
[8] S. Laux. A Simulation Study of the Switching Times of 22- and 17-nm Gate-Length SOI nFETs on High Mobility Substrates and Si , 2007, IEEE Transactions on Electron Devices.
[9] L. Selmi,et al. Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS , 2005, IEEE Transactions on Electron Devices.
[10] Chenming Hu,et al. A folded-channel MOSFET for deep-sub-tenth micron era , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
[11] S. Deleonibus,et al. Experimental Investigation on the Quasi-Ballistic Transport: Part II—Backscattering Coefficient Extraction and Link With the Mobility , 2009, IEEE Transactions on Electron Devices.
[12] S. Laux,et al. Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors , 1995, Proceedings of International Electron Devices Meeting.
[13] A. J. Williamson,et al. Pseudopotential study of electron-hole excitations in colloidal free-standing InAs quantum dots , 1999, cond-mat/9908158.
[14] L. Selmi,et al. Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain , 2005, IEEE Transactions on Electron Devices.
[15] Martin M. Frank,et al. Advanced high-k dielectric stacks with polySi and metal gates: Recent progress and current challenges , 2006, IBM J. Res. Dev..
[16] K. Natori,et al. Ballistic MOSFET reproduces current-voltage characteristics of an experimental device , 2002, IEEE Electron Device Letters.
[17] R. Chau,et al. Advanced depleted-substrate transistors: Single-gate, double-gate, and Tri-gate , 2002 .
[18] M. Rodwell,et al. Simulation of Electron Transport in High-Mobility MOSFETs: Density of States Bottleneck and Source Starvation , 2007, 2007 IEEE International Electron Devices Meeting.
[19] N. Sano,et al. 3D Monte Carlo analysis of potential fluctuations under high electron concentrations , 2008 .
[20] Zunger,et al. Empirical atomic pseudopotentials for AlAs/GaAs superlattices, alloys, and nanostructures. , 1994, Physical review. B, Condensed matter.
[21] Massimo V. Fischetti,et al. Anatomy of Carrier Backscattering in Silicon Nanowire Transistors , 2009, 2009 13th International Workshop on Computational Electronics.
[22] W. Shockley,et al. Diffusion and Drift of Minority Carriers in Semiconductors for Comparable Capture and Scattering Mean Free Paths , 1962 .
[23] Yuan Taur,et al. On the scaling limit of ultrathin SOI MOSFETs , 2006 .
[24] Alex Zunger,et al. Resonant hole localization and anomalous optical bowing in InGaN alloys , 1999 .
[25] A. Gnudi,et al. Quasi-Ballistic Transport in Nanowire Field-Effect Transistors , 2008, IEEE Transactions on Electron Devices.
[26] S. Deleonibus,et al. Experimental Investigation on the Quasi-Ballistic Transport: Part I—Determination of a New Backscattering Coefficient Extraction Methodology , 2009, IEEE Transactions on Electron Devices.
[27] Mark S. Lundstrom. Elementary scattering theory of the Si MOSFET , 1997, IEEE Electron Device Letters.
[28] Wei,et al. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP. , 1996, Physical review. B, Condensed matter.
[29] Albert,et al. Determination of the inversion-layer thickness from capacitance measurements of metal-oxide-semiconductor field-effect transistors with ultrathin oxide layers. , 1988, Physical review. B, Condensed matter.
[30] M. Lundstrom,et al. Essential physics of carrier transport in nanoscale MOSFETs , 2002 .
[31] G. Gildenblat,et al. One-flux theory of a nonabsorbing barrier , 2002 .
[32] N. Sano,et al. 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes , 2008 .
[33] C. Hu,et al. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm , 2000 .
[34] M. Anantram,et al. Role of scattering in nanotransistors , 2002, cond-mat/0211069.
[35] D.A. Antoniadis,et al. MOSFET Performance Scaling—Part I: Historical Trends , 2008, IEEE Transactions on Electron Devices.
[36] R. L. Longini,et al. Alternative Approach to the Solution of Added Carrier Transport Problems in Semiconductors , 1961 .
[37] P. J. Price. Chapter 4 Monte Carlo Calculation of Electron Transport in Solids , 1979 .
[38] S. Laux,et al. Comments on "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFETs" [with reply] , 1991 .
[39] M. V. Fischetti,et al. Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go? , 1992, 1992 International Technical Digest on Electron Devices Meeting.
[40] S. Laux,et al. Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. , 1988, Physical review. B, Condensed matter.
[41] N. Sano. Kinetics of quasiballistic transport in nanoscale semiconductor structures: is the ballistic limit attainable at room temperature? , 2004, Physical review letters.
[42] A. Khakifirooz,et al. MOSFET performance scaling: Limitations and future options , 2008, 2008 IEEE International Electron Devices Meeting.
[43] I. Eisele,et al. A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages , 2003 .
[44] M. Lundstrom. On the mobility versus drain current relation for a nanoscale MOSFET , 2001, IEEE Electron Device Letters.
[45] P. Scott Carney,et al. Silicon field-effect transistor based on quantum tunneling , 1994 .