Low-frequency noise and effective trap density of short channel p- and n-types junctionless nanowire transistors

Abstract This work presents an evaluation of the Low-Frequency Noise (LFN) exhibited by short-channel Junctionless Nanowire Transistors (JNTs). Unlike in previous works in which only the noise of n-type transistors was evaluated, this paper exhibits an analysis of both the LFN and the effective trap density of n- and p-type JNTs. The low-frequency noise is analyzed in terms of the channel length as well as doping concentration and has shown to be nearly independent on the former parameter when the device is biased above threshold and to decrease with the raise of the latter. Also, carrier number fluctuations dominate the LFN in nMOS JNTs whereas an important mobility fluctuation component is present in the pMOS ones. The effective trap density of JNTs has shown to be in the order of 10 19  cm −3  eV −1 , presenting its maximum around 1.4 nm away from the silicon/gate dielectric interface independently on the device type or doping concentration.

[1]  Chi-Woo Lee,et al.  Nanowire transistors without junctions. , 2010, Nature nanotechnology.

[2]  A. Kranti,et al.  Junctionless nanowire transistor (JNT): Properties and design guidelines , 2010, 2010 Proceedings of the European Solid State Device Research Conference.

[3]  Wim Magnus,et al.  Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode , 2008 .

[4]  N. Collaert,et al.  Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs , 2010 .

[5]  Jean-Pierre Colinge,et al.  Low-frequency noise in junctionless multigate transistors , 2011 .

[6]  Ran Yan,et al.  Junctionless Multiple-Gate Transistors for Analog Applications , 2011, IEEE Transactions on Electron Devices.

[8]  Alexander A. Balandin,et al.  Noise and Fluctuations Control in Electronic Devices , 2002 .

[9]  B. McCarthy,et al.  SOI gated resistor: CMOS without junctions , 2009, 2009 IEEE International SOI Conference.

[10]  Gerard Ghibaudo,et al.  Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors , 1991 .

[11]  Chi-Woo Lee,et al.  Junctionless multigate field-effect transistor , 2009 .

[12]  E. Simoen,et al.  Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors , 2007 .

[13]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[14]  Sylvain Barraud,et al.  Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors , 2013 .

[15]  Marcelo Antonio Pavanello,et al.  Trap density characterization through low-frequency noise in junctionless transistors , 2013 .

[16]  Mikael Östling,et al.  Low-Frequency Noise in Advanced MOS Devices , 2007 .

[17]  O. Faynot,et al.  Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm , 2012, IEEE Electron Device Letters.

[18]  Marcelo Antonio Pavanello,et al.  Threshold voltage in junctionless nanowire transistors , 2011 .

[19]  F. Hooge.  1/ƒ noise is no surface effect , 1969 .

[20]  Jean-Pierre Colinge,et al.  FinFETs and Other Multi-Gate Transistors , 2007 .

[21]  L.K.J. Vandamme,et al.  What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs? , 2008, IEEE Transactions on Electron Devices.

[22]  Jianmin Miao,et al.  Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior , 2011, IEEE Electron Device Letters.

[23]  Chih-Tang Sah,et al.  Theory and experiments of low-frequency generation-recombination noise in MOS transistors , 1969 .

[24]  M. de Souza,et al.  Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors , 2012, 2012 IEEE International SOI Conference (SOI).

[25]  Eddy Simoen,et al.  Low-frequency noise in silicon-on-insulator devices and technologies , 2007 .