Integration of a novel, high quality Si/sub 3/N/sub 4/ metal insulator metal (MIM) capacitors deposited by (ICP-CVD) at room temperature with 50 nm T-gate InP-HEMTs to realise monolithic millimetre-wave integrated circuits (MMMICs)
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K. Elgaid | H. McLelland | X. Cao | I. Thayne
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