论文信息 - Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer

Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer

Abstract This paper deals with the development of the disilane Si 2 H 6 gaseous source for gate technology and more precisely, reports on the use of nitrogen doped silicon (NIDOS) deposited from disilane and ammonia for the realisation of polycrystalline gate. Boron diffusivity into the NIDOS films is studied thanks to SIMS experiments, and results are extended to the fabrication of P + -poly-Si/NIDOS/SiO 2 /Si capacitive structures. Electrical characterisations evidenced finally the influence of boron and nitrogen atoms on the electrical properties of PMOS devices.

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