论文信息 - Uniaxial stress analysis of bound-exciton excited states in lithium-doped silicon

Uniaxial stress analysis of bound-exciton excited states in lithium-doped silicon

Uniaxial stress measurements are reported in the luminescence associated with the decay of excitons bound to neutral lithium donors in silicon. Particular attention has been paid to the behaviour of excited state transitions which were not observed in an earlier study carried out at lower temperatures. The results are shown to be in excellent agreement with the predictions of the Kirczenow shell model (1977). Confirmatory evidence is provided for the existence of an excited hole state of the lithium donor bound exciton.

M. Henry | E. C. Lightowlers

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