论文信息 - Study on the composition profile of a Hg1-xCdxTe epitaxy film by infrared transmission spectroscopy

Study on the composition profile of a Hg1-xCdxTe epitaxy film by infrared transmission spectroscopy

Based on our empirical rules for the intrinsic absorption coefficient and refractive index of Hg1-xCdxTe in Hougen's model, a useful method for determining the composition profile of an epitaxy layer from room-temperature infrared transmittance spectroscopy is presented. The compositional depth non-uniformity of Hg1-xCdxTe film samples grown by liquid-phase epitaxy, metal-organic chemical vapour deposition and molecular beam epitaxy techniques is determined using this method and compared with that from secondary ion mass spectroscopy and X-ray microprobic measurements.

[1] C. A. Hougen,et al. Model for infrared absorption and transmission of liquid‐phase epitaxy HgCdTe , 1989 .

[2] Kun Liu,et al. Empirical rule of intrinsic absorption spectroscopy in Hg1−xCdxTe , 1994 .

[3] P. Boyd,et al. Overview of compositional measurement techniques for HgCdTe with emphasis on IR transmission, energy dispersive X-ray analysis and optical reflectance , 1993 .

[4] W. E. Tennant,et al. Liquid phase epitaxial growth of large area Hg1−xCdxTe epitaxial layers , 1984 .

[5] Kun Liu,et al. Composition and temperature dependence of the refractive index in Hg1−xCdxTe , 1994 .

[6] Kun Liu,et al. Measurement of composition in Hg1−xCdxTe epilayers , 1994 .

[7] Junhao Chu,et al. Band‐to‐band optical absorption in narrow‐gap Hg1−xCdxTe semiconductors , 1992 .

[8] C. Viswanathan,et al. Compositional analysis of HgCdTe epitaxial layers using secondary ion mass spectrometry , 1992 .