Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
暂无分享,去创建一个
Michael S. Shur | Michael E. Levinshtein | Grigory Simin | Nezih Pala | S. L. Rumyantsev | M. Asif Khan | Remigijus Gaska | Xuhong Hu | M. Shur | N. Pala | M. Levinshtein | G. Simin | M. Khan | R. Gaska | R. Gaska | J. Yang | S. Rumyantsev | Xuhong Hu | X. Hu | J. W. Yang
[1] A. Lunev,et al. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor , 2000, IEEE Electron Device Letters.
[2] L.K.J. Vandamme,et al. Experimental studies on 1/f noise , 1981 .
[3] L.K.J. Vandamme,et al. Coherence between gate- and drain-current fluctuations in MESFET's and MODFET's biased in the ohmic region , 1992 .
[4] Alexander A. Balandin. Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors , 2000 .
[5] Low frequency noise and screening effects in AlGaN/GaN HEMTs , 1998 .
[6] Cor Claeys,et al. Reliability aspects of the low-frequency noise behaviour of submicron CMOS technologies , 1999 .
[7] Michael S. Shur,et al. Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates , 2000 .
[8] Don Monroe,et al. TUNNELING CURRENT NOISE IN THIN GATE OXIDES , 1996 .
[9] Low-frequency noise in AlGaN/GaN MOS-HFETs , 2000 .
[10] Michael S. Shur,et al. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise , 1998 .
[11] D. Rigaud,et al. 1/f noise in MODFETs at low drain bias , 1990 .