The electrical characterization of surfaces, interfaces and contacts to a-Si:H
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[1] M. Brodsky,et al. Thickness dependent conductivity of n-type hydrogenated amorphous silicon , 1980 .
[2] H. Fritzsche. Characterized of glow-discharge deposited a-Si:H , 1980 .
[3] M. Silver,et al. On anomalous drift mobility results in α-silicon alloys , 1981 .
[4] R. Crandall. Determination of the drift mobility in high‐conductivity amorphous silicon , 1981 .
[5] D. Lang,et al. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy , 1982 .
[6] P. Kirby,et al. Carrier propagation in sputtered a -Si:H , 1982 .
[7] M. Tanielian,et al. Adsorbate effects on the electrical conductance of a-Si: H , 1982 .
[8] R. Street. Measurements of depletion layers in hydrogenated amorphous silicon , 1983 .
[9] N. Johnson. Deep-level distributions in hydrogenated amorphous silicon , 1983 .
[10] D. Biegelsen,et al. Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon , 1983 .
[11] M. Powell,et al. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors , 1983 .
[12] H. Fritzsche,et al. Effect of surface oxide on transport properties in a-Si:H☆ , 1983 .
[13] R. Street,et al. Anomalous surface photoconductivity in hydrogenated amorphous silicon , 1983 .
[14] R. Street,et al. Effects of doping on transport and deep trapping in hydrogenated amorphous silicon , 1983 .
[15] C. Roxlo,et al. Amorphous semiconductor superlattices , 1983 .
[16] M. Abkowitz,et al. Xerographic determination of electron drift mobility in a-Si: H , 1984 .