Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET

InGaAs planar TFETs with 70% In content are fabricated and characterized. The increase of the In content of the 8 nm channel from 53% to 70% is found to significantly boost the performance of the device. Record performance I<sub>on</sub>=4 μA/μm at I<sub>eff</sub> = 100 μA/μm, V<sub>dd</sub>=0.5V and V<sub>d</sub>=0.3 V with minimum sub-threshold swing (SS<sub>min</sub>) of 60 mV/dec at 300K is obtained for a homo-junction InGaAs device. Reliability assessment shows that the TFET SS and transconductance (g<sub>m</sub>) are more immune to PBTI stress than its equivalent MOSFET device.