论文信息 - Inductance probing into the semiconductor breakdown

Inductance probing into the semiconductor breakdown

In this letter, an experimental method to unravel mixed interband tunneling and avalanche effects in heavily doped silicon junctions is presented. This method measures the alternating current impedance in the breakdown regime in addition to the direct current characteristics and clearly extracts the avalanche parameters in the presence of strong tunneling. Many phenomena in the high field transport in silicon were observed due to this capability and have important device applications. The method can be applied to other semiconductors as well.

D. S. Pan | Chanho Lee | D. Pan | Chanho Lee | V. H. Ngo

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