Cobalt-60, Proton and Electron Irradiation of a Radiation-Hardened Active Pixel Sensor

We present the key results of multiple dark current (DC) characterization campaigns of the HAS2 radiation-hardened active pixel sensor (APS). These characterizations encompassed Cobalt-60 total ionizing dose, proton and electron displacement damage tests at low and room temperature. This gives us the opportunity to discuss the relevance on this APS of two phenomena that had been previously observed on charge coupled devices (CCDs): room temperature displacement damage defect annealing, and the limited effects of electron displacement damage on dark current.

[1]  A. Mohammadzadeh,et al.  Low temperature alpha particle irradiation of a STAR1000 CMOS APS , 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.

[2]  M. S. Robbins,et al.  High-energy proton-induced dark signal in silicon charge coupled devices , 2000 .

[3]  Bart Dierickx,et al.  Enhanced dark current generation in proton-irradiated CMOS active pixel sensors , 2002 .

[4]  J. R. Srour,et al.  Enhanced displacement damage effectiveness in irradiated silicon devices , 1989 .

[5]  R. A. Hartmann,et al.  Permanent Damage Produced by Single Proton Interactions in Silicon Devices , 1986, IEEE Transactions on Nuclear Science.

[6]  T. P. Ma,et al.  Ionizing radiation effects in MOS devices and circuits , 1989 .

[7]  Ludovic Blarre,et al.  HYDRA Multiple Heads Star Tracker based on Active Pixel Sensor and the gyrometer assistance option , 2006 .

[8]  Cheryl J. Dale,et al.  Particle-induced spatial dark current fluctuations in focal plane arrays , 1990 .

[9]  Cheryl J. Dale,et al.  Proton-induced displacement damage distributions and extremes in silicon microvolumes charge injection device , 1990 .

[10]  Paul J. McWhorter,et al.  Modeling the anneal of radiation-induced trapped holes in a varying thermal environment , 1990 .

[11]  Bedabrata Pain,et al.  Analysis and Enhancement of Low-Light-Level Performance of Photodiode-Type CMOS Active Pixel Images Operated with Sub-Threshold Reset , 1999 .

[12]  Cheryl J. Dale,et al.  Displacement damage extremes in silicon depletion regions , 1989 .

[13]  S. Watts,et al.  A new model for generation-recombination in silicon depletion regions after neutron irradiation , 1996 .

[14]  Cheryl J. Dale,et al.  A comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes , 1994 .

[15]  J. R. Srour,et al.  A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices , 2006, IEEE Transactions on Nuclear Science.