论文信息 - Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy - 字舞流文

Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy

Y. Oshima | K. Higashimine | T. Murakami | A. Fleurence | Y. Yamada-Takamura | Takahiro Yonezawa | T. Yonezawa