High-input-power saturation properties of a polarization-insensitive semiconductor Mach-Zehnder interferometer gate switch for WDM applications
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N. Yoshimoto | Y. Noguchi | Y. Shibata | N. Yoshimoto | Y. Shibata | S. Oku | Y. Noguchi | S. Oku | S. Kondo | S. Kondo
[1] Y. Shibata,et al. Controlled beam dry etching of InP by using Br2-N2 Gas , 1995 .
[2] N. Yoshimoto,et al. POLARIZATION-INSENSITIVE FIELD-INDUCED REFRACTIVE INDEX CHANGE USING A LATTICE-MATCHED INGAALAS/INALAS MULTIPLE QUANTUM WELL STRUCTURE , 1996 .
[3] Y. Yamada,et al. Demonstration of frequency-routing type photonic ATM switch (FRONTIERNET) prototype , 1996, Proceedings of European Conference on Optical Communication.
[4] J.-Y. Emery,et al. 1550 nm polarization independent DBR gain clamped SOA with high dynamic input power range , 1996, Proceedings of European Conference on Optical Communication.
[5] N. Yoshimoto,et al. InGaAlAs/InAlAs multiple quantum well phase modulator integrated with spot size conversion structure , 1994, IEEE Photonics Technology Letters.
[6] S. Tanaka,et al. Polarization and wavelength insensitive MQW electroabsorption optical gates for WDM switching systems , 1996, IEEE Photonics Technology Letters.
[7] K. Komatsu,et al. Polarization-insensitive semiconductor optical amplifier array grown by selective MOVPE , 1994, IEEE Photonics Technology Letters.
[8] Naoto Yoshimoto,et al. Dynamic response of 2*2 InGaAlAs/InAlAs multiquantum well (MQW) directional coupler waveguide switch modules , 1994 .
[9] Naoto Yoshimoto,et al. Fully polarisation independent Mach-Zehnder optical switch using a lattice-matched InGaAlAs/InAlAs MQW and high-mesa waveguide structure , 1996 .