Impact ionization phenomena in AlGaAs/GaAs HBTs

Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.

[1]  C. Tsironis.  Prebreakdown phenomena in GaAs epitaxial layers and FET's , 1980, IEEE Transactions on Electron Devices.

[2]  J. David,et al.  Gate-drain avalanche breakdown in GaAs power MESFET's , 1982, IEEE Transactions on Electron Devices.

[3]  Thomas P. Pearsall,et al.  The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs , 1978 .

[4]  S. Asai,et al.  Excess gate current analysis of junction gate FET's by two- dimensional computer simulation , 1978, IEEE Transactions on Electron Devices.

[5]  K. Lehovec,et al.  Field distribution in junction field-effect transistors at large drain voltages , 1975, IEEE Transactions on Electron Devices.

[6]  H. Morkoc,et al.  Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization , 1984, IEEE Transactions on Electron Devices.

[7]  C. Hu,et al.  Impact ionization in GaAs MESFETs , 1990, IEEE Electron Device Letters.

[8]  K. Yamaguchi,et al.  Surface potential effect on gate—Drain avalanche breakdown in GaAs MESFET's , 1987, IEEE Transactions on Electron Devices.

[9]  A. Paccagnella,et al.  Comments, with reply, on 'Impact ionization in GaAs MESFETs' by K. Hui, et al , 1991, IEEE Electron Device Letters.

[10]  D. Widiger,et al.  Two-dimensional numerical analysis of the high electron mobility transistor , 1984, IEEE Electron Device Letters.

[11]  W. Frensley,et al.  Power-limiting breakdown effects in GaAs MESFET's , 1981, IEEE Transactions on Electron Devices.