Temperature dependent luminescence from quantum dot arrays: phonon‐assisted line broadening versus carrier escape‐induced narrowing

The paper presents a theoretical model describing the temperature dependence of the photoluminescence spectrum of self‐ordered quantum dots arrays taking into account exciton–phonon interaction and thermal carriers transfer. This model is applied to the photoluminescence behaviour of InAs quantum dots grown on GaAs vicinal substrates. It allows distinguishing between effects caused by the different temperature‐induced mechanisms and thus provides information about the physical and electronic structure of the quantum dot arrays.

[1]  R. Nötzel,et al.  Formation of linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering and their optical properties , 2007 .

[2]  I. Ferguson,et al.  Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs∕GaAs quantum well , 2007 .

[3]  M. Smirnov,et al.  Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots , 2007 .

[4]  Adriana Passaseo,et al.  Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation , 2007 .

[5]  S. Sanguinetti,et al.  Carrier thermodynamics in InAs/In x Ga 1-x As quantum dots , 2006 .

[6]  S. Sanguinetti,et al.  Electron-phonon interaction in individual strain-free GaAs/Al0.3Ga0.7As quantum dots , 2006 .

[7]  K. Pierz,et al.  Temperature-dependent optical properties of In As ∕ Ga As quantum dots: Independent carrier versus exciton relaxation , 2005 .

[8]  G. Bastard,et al.  Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots , 2003 .

[9]  R. Murray,et al.  Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots , 2003 .

[10]  D. Bimberg,et al.  Ultralong dephasing time in InGaAs quantum dots. , 2001, Physical review letters.

[11]  L. Marsal,et al.  Acoustic phonon broadening mechanism in single quantum dot emission , 2001 .

[12]  G. E. Cirlin,et al.  Radiative Recombination Features of Metastable Quantum Dot Array , 2001 .

[13]  V. N. Petrov,et al.  Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces , 2000 .

[14]  Mohamed Henini,et al.  Carrier thermal escape and retrapping in self-assembled quantum dots , 1999 .

[15]  Jin Zou,et al.  Inhibited carrier transfer in ensembles of isolated quantum dots , 1999 .

[16]  Y. Shiraki,et al.  Temperature dependence of microscopic photoluminescence spectra of quantum dots and quantum wells , 1998 .

[17]  J. Merz,et al.  Temperature effects on the radiative recombination in self-assembled quantum dots , 1996 .

[18]  Nikolai N. Ledentsov,et al.  Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface , 1995 .