The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program: Convergence of compound semiconductor devices and silicon-enabled architectures

The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program is developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices, as well as other emerging materials and devices, with high-density silicon CMOS technology. This technology is currently enabling RF/mixed signal circuits with revolutionary performance. For example, InP HBT + CMOS technology is being utilized in advanced DACs and ADCs with CMOS-enabled calibration and self-healing techniques for correcting static and dynamic errors in situ. Such CMOS-enabled self-healing techniques are expected to more generally enable improved CS-based circuit performance and yield in the presence of process and environmental variability, as well as aging. DAHI is also expected to enable the integration of high power CS devices with silicon-based linearization techniques to realize highly power efficient transmitters. By enabling this heterogeneous integration capability, DAHI seeks to establish a new paradigm for microsystems designers to utilize a diverse array of materials and device technologies on a common silicon-based platform.

[1]  W. E. Hoke,et al.  Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit , 2012 .

[2]  E. D. Cohen.  The MIMIC Program—A Retrospective , 2012, IEEE Microwave Magazine.

[3]  J. Chen,et al.  InP HBT/Si CMOS-Based 13-Bit 1.33Gsps Digital-to-Analog Converter with >70 dB SFDR , 2012 .

[4]  D. W. Branch,et al.  Fully integrated switchable filter banks , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

[5]  E. Johnson.  Physical limitations on frequency and power parameters of transistors , 1965 .

[6]  S. Valette,et al.  Hybrid integration of semiconductor lasers with Si-based single-mode ridge waveguides , 1992 .

[7]  P. Bai,et al.  A 45nm low power system-on-chip technology with dual gate (logic and I/O) high-k/metal gate strained silicon transistors , 2008, 2008 IEEE International Electron Devices Meeting.

[8]  Adrian Tang,et al.  A low-overhead self-healing embedded system for ensuring high yield and long-term sustainability of 60GHz 4Gb/s radio-on-a-chip , 2012, 2012 IEEE International Solid-State Circuits Conference.

[9]  N. Jokerst,et al.  Epitaxial lift-off GaAs/AlGaAs metal-semiconductor-metal photodetectors with back passivation , 1993, IEEE Photonics Technology Letters.

[10]  V. Radisic,et al.  Fabrication of InP HEMT devices with extremely high Fmax , 2008, 2008 20th International Conference on Indium Phosphide and Related Materials.

[11]  S.E. Turner,et al.  Direct Digital Synthesizer With Sine-Weighted DAC at 32-GHz Clock Frequency in InP DHBT Technology , 2006, IEEE Journal of Solid-State Circuits.

[12]  T. E. Kazior,et al.  High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate , 2010, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[13]  G. L. Creech,et al.  Toward Millimeter-Wave DACs: Challenges and Opportunities , 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[14]  Umesh K. Mishra,et al.  GaN-Based RF Power Devices and Amplifiers , 2008, Proceedings of the IEEE.

[15]  Joe Zhou,et al.  Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

[16]  P. Parikh,et al.  40-W/mm Double Field-plated GaN HEMTs , 2006, 2006 64th Device Research Conference.

[17]  M. Sokolich,et al.  Heterogeneous wafer-scale integration of 250nm, 300GHz InP DHBTs with a 130nm RF-CMOS technology , 2008, 2008 IEEE International Electron Devices Meeting.

[18]  E. Augendre,et al.  A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

[19]  P. Chevalier,et al.  Towards THz SiGe HBTs , 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[20]  E. Guiot,et al.  High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate , 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[21]  Hadis Morkoç,et al.  Gallium arsenide and other compound semiconductors on silicon , 1990 .