Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors
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J. Kim | F. Ren | Y. Irokawa | S. Pearton | C. Abernathy | R. Mehandru | R. Fitch | J. Gillespie | A. Crespo | B. Gila | J. Kim | T. Jenkins | J. Sewell | D. Via | B. Luo | A. Onstine | F. Ren | S. Pearton