Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown
暂无分享,去创建一个
Ting-Kuo Kang | Ming-Jer Chen | K. Fu | C. H. Liu | Ming-Jer Chen | Kuan-Yu Fu | T. Kang | Yih J. Chang | Yuan-Hwa Lee | Yuan Hwa Lee
[1] M. Ausloos,et al. Non-Gaussian behavior and anticorrelations in ultrathin gate oxides after soft breakdown , 1999 .
[2] Charles G. Sodini,et al. 1/f noise interpretation of the effect of gate oxide nitridation and reoxidation in dielectric traps , 1990 .
[3] G. Mura,et al. Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms? , 2000, IEEE Electron Device Letters.
[4] Guido Groeseneken,et al. On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers , 1998 .
[5] Scott T. Martin,et al. Degraded noise characteristics of submicrometer area field effect transistors subjected to plasma etching and Fowler–Nordheim stress , 1995 .
[6] Ming-Jer Chen,et al. Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides , 2000 .
[7] R. S. Scott,et al. A model relating wearout to breakdown in thin oxides , 1994 .
[8] Kakalios,et al. Dynamical percolation model of conductance fluctuations in hydrogenated amorphous silicon. , 1995, Physical review letters.
[9] C. Hu,et al. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .
[10] Roberto Saletti,et al. Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodes , 1988 .
[11] M. Heyns,et al. Soft breakdown of ultra-thin gate oxide layers , 1996 .
[12] P. Lai,et al. 1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses , 1999 .
[13] Jordi Suñé,et al. Soft breakdown fluctuation events in ultrathin SiO2 layers , 1998 .
[14] Kenji Taniguchi,et al. A new soft breakdown model for thin thermal SiO/sub 2/ films under constant current stress , 1999 .
[15] Gerard Ghibaudo,et al. Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides , 1999 .
[16] Piero Olivo,et al. Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown , 1987 .