Terahertz Generation by Multiplication

We report on the status of symmetric varactor diode multipliers for signal generation in the terahertz frequency range. The progress and basic principles of Heterostructure Barrier Varactor (HBV) diodes are presented. Furthermore, the design methodology and electro-thermal simulation results of high power HBV multipliers for signal generation in the millimeter and sub-millimeter wave region are also presented. Finally, a state-of-the-art HBV tripler with an output power of 0.2 Watt at 113 GHz is presented.

[1]  P. Siegel.  Terahertz technology in biology and medicine , 2004, IEEE Transactions on Microwave Theory and Techniques.

[2]  J. Stake,et al.  Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate , 2000, IEEE Electron Device Letters.

[3]  S. M. Sze.  Physics of semiconductor devices /2nd edition/ , 1981 .

[4]  D. Lippens,et al.  InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication , 1998, IEEE Microwave and Guided Wave Letters.

[5]  J. Stake,et al.  A High-Power Frequency Tripler for 100 GHz , 2006, 2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics.

[6]  M. Claassen,et al.  Improved frequency tripler with integrated single-barrier varactor , 2000 .

[7]  I. Mehdi,et al.  An all-solid-state broad-band frequency multiplier chain at 1500 GHz , 2004, IEEE Transactions on Microwave Theory and Techniques.

[8]  M. Ingvarson,et al.  Thermal constraints for heterostructure barrier varactors , 2004, IEEE Electron Device Letters.

[9]  Jan Stake,et al.  11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler , 2005 .

[10]  B. Alderman,et al.  HBV tripler with 21% efficiency at 102 GHz , 2006 .

[11]  G. Chattopadhyay,et al.  Capability of THz sources based on Schottky diode frequency multiplier chains , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[12]  M. Ingvarson,et al.  An electro-thermal HBV model , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[14]  A. Uhlir.  The Potential of Semiconductor Diodes in High-Frequency Communications , 1958, Proceedings of the IRE.

[15]  Jan Stake,et al.  Heterostructure-barrier-varactor design , 2000 .

[16]  R. Mattauch,et al.  A Novel Whiskerless Schottky Diode for Millimeter and Submillimeter Wave Application , 1987, 1987 IEEE MTT-S International Microwave Symposium Digest.

[17]  Hiroshi Ito,et al.  High-power continuous-terahertz-wave generation using resonant-antenna-integrated uni-travelling-carrier photodiode , 2004 .

[18]  Jan Stake,et al.  Effects of self-heating on planar heterostructure barrier varactor diodes , 1998 .

[19]  M. Claassen,et al.  Power generation at millimetre-wave frequencies using GaAs/GaAlAs triplers , 2004 .

[20]  Bascom S. Deaver,et al.  High-Efficiency Heterostructure-Barrier-Varactor Frequency Triplers Using AlN Substrates , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[21]  H. Ito,et al.  High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes , 2004, IEEE Journal of Selected Topics in Quantum Electronics.

[22]  E. Linfield,et al.  Terahertz semiconductor-heterostructure laser , 2002, Nature.

[23]  David Porterfield,et al.  Integrated Terahertz Transmit/Receive Modules , 2003, 2003 33rd European Microwave Conference, 2003.

[24]  Tomofumi Furuta,et al.  Rectangular waveguide output unitraveling-carrier photodiode module for high-power photonic millimeter-wave generation in the F-band , 2003 .

[25]  I. Mehdi,et al.  Terahertz Multiplier Circuits , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[26]  Jack R. East,et al.  Current saturation in submillimeter-wave varactors , 1992 .