High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
暂无分享,去创建一个
L. F. Tiemeijer | P.J.A. Thijs | P. I. Kuindersma | J. J. M. Binsma | L. Tiemeijer | P. Kuindersma | J. Binsma | P. Thijs | T. Dongen | T. van Dongen
[1] D. M. Cooper,et al. High-power 1.5 mu m all-MOVPE buried heterostructure graded index separate confinement multiple quantum well lasers , 1989 .
[2] R. Bhat,et al. Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers , 1990, IEEE Photonics Technology Letters.
[3] N. Olsson,et al. Growth and characterization of continuously graded index separate confinement heterostructure (GRIN-SCH) InGaAs-InP long wavelength strained layer quantum-well lasers by metalorganic vapor phase epitaxy , 1990 .
[4] A. Sugimura,et al. Auger recombination effect on threshold current of InGaAsP quantum well lasers , 1983 .
[5] H. Hasegawa,et al. Theory of Cyclotron Resonance in Strained Silicon Crystals , 1963 .
[6] N. Dutta,et al. InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics , 1990 .
[7] Eli Yablonovitch,et al. Reduction of lasing threshold current density by the lowering of valence band effective mass , 1986 .
[8] A. R. Adams,et al. Band-structure engineering for low-threshold high-efficiency semiconductor lasers , 1986 .
[9] J. LaCourse,et al. Anomalously high damping in strained InGaAs-GaAs single quantum well lasers , 1991, IEEE Photonics Technology Letters.
[10] O'Reilly,et al. Theory of the hole subband dispersion in strained and unstrained quantum wells. , 1986, Physical review. B, Condensed matter.
[11] Kerry J. Vahala,et al. Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions , 1988 .
[12] P.J.A. Thijs,et al. Tunable three-section, strained MQW, PA-DFB's with large single mode tuning range (72 A) and narrow linewidth (around 1 Mhz) , 1990, 12th IEEE International Conference on Semiconductor Laser.
[13] P.J.A. Thijs,et al. High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 mu m , 1989 .
[14] Masahiro Asada,et al. Gain and intervalence band absorption in quantum-well lasers , 1984 .
[15] E. P. O'Reilly,et al. Proposal For A Low Threshold Current Long Wavelength Strained Layer Laser , 1987, Other Conferences.
[16] E. P. O'Reilly,et al. Low Threshold Current InP-Based Strained-Layer 1.55µm Lasers , 1988, Other Conferences.
[17] E. O’Reilly,et al. Improved dynamics and linewidth enhancement factor in strained-layer lasers , 1989 .
[18] N. Dutta,et al. Linewidth enhancement factor for InGaAs/InP strained quantum well lasers , 1990 .
[19] R. Cavicchi,et al. Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP , 1989 .
[20] T. V. Dongen,et al. Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidate , 1991 .
[21] Eli Yablonovitch,et al. Band structure engineering of semiconductor lasers for optical communications , 1988 .
[22] Niloy K. Dutta,et al. Calculation of Auger rates in a quantum well structure and its application to InGaAsP quantum well lasers , 1983 .
[23] Gregory Raybon,et al. Large- and small-signal gain characteristics of 1.5 μm multiple quantum well optical amplifiers , 1990 .
[24] C. Henry. Theory of the linewidth of semiconductor lasers , 1982 .
[25] L. A. Coldren,et al. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser , 1988 .
[26] C. Bulle-lieuwma,et al. Improved 1.5 μm wavelength lasers using high quality LP-OMVPE grown strained-layer InGaAs quantum wells , 1990 .
[27] N. Olsson,et al. High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers , 1990 .
[28] T. Koch,et al. Effect of nonlinear gain reduction on semiconductor laser wavelength chirping , 1986 .
[29] Yia-Chung Chang,et al. Electronic structures of In1−xGaxAs-InP strained-layer quantum wells , 1989 .
[30] Auger effects in acceptor‐doped long‐wavelength strained quantum well lasers , 1989 .
[31] John E. Bowers,et al. Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser , 1987 .
[32] N. Chinone,et al. Linewidth enhancement factor in strained quantum well lasers , 1989, IEEE Photonics Technology Letters.
[33] P. Thijs,et al. 120-mW cw output power from 1.5-jum wavelength modulation doped InGaAs strained-layer quantum well lasers , 1990 .
[34] E. Young,et al. An effective barrier against the interdiffusion of iron and zinc dopants in InP , 1991 .
[35] K. Petermann. Laser Diode Modulation and Noise , 1988 .
[36] Tawee Tanbun-Ek,et al. Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy , 1989 .
[37] M. Oron,et al. Low threshold highly efficient strained quantum well lasers at 1.5 micrometre wavelength , 1990 .
[38] Naoki Chinone,et al. Enhanced relaxation oscillation frequency and reduced nonlinear K-factor in InGaAs/InGaAsP MQW lambda /4-shifted DFB lasers , 1990 .
[39] A. Yariv,et al. Auger recombination in quantum-well InGaAsP heterostructure lasers , 1982 .
[40] R. Olshansky,et al. Frequency response of 1.3µm InGaAsP high speed semiconductor lasers , 1987 .
[41] Hiroshi Ishikawa,et al. Tunable, narrow-linewidth and high-power λ/4-shifted DFB laser , 1989 .
[42] J. Binsma,et al. High power and high temperature operation of 1.5 mu m wavelength strained-layer InGaAs/InGaAsP SIPBH lasers , 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
[43] T. Tanbun-ek,et al. Strained InGaAs/InP quantum well lasers , 1990 .
[44] R. A. Abram,et al. Auger recombination in a quantum well heterostructure , 1983 .
[45] Masahiro Asada,et al. The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y Lasers Related to Intervalence Band Absorption , 1980 .
[46] H. W. Kesteren,et al. Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low‐pressure organometallic vapor phase epitaxy , 1988 .
[47] S. Kumashiro,et al. Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers , 1989 .
[48] N. Dutta,et al. InGaAs/InP quantum well lasers with sub-mA threshold current , 1990 .