Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement

This letter reports on a new method for the characterization of transistors transient self-heating based on gate end-to-end resistance measurement. An alternative power signal is injected to the device output (between drain and source) at constant gate-to-source voltage. The dependence of gate resistance with temperature is used to extract the thermal impedance of the device in frequency domain via electrical measurement. This new method is validated on common-gate AlGaN/GaN high-electron-mobility transistors on Si substrate under different experimental conditions, which demonstrates its potential to provide complete dynamic self-heating models for power transistors.

[1]  A. Parker,et al.  Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry , 2013, IEEE Transactions on Electron Devices.

[2]  H. Blanck,et al.  Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs , 2016, IEEE Electron Device Letters.

[3]  F. Bertoluzza,et al.  Three-dimensional finite-element thermal simulation of GaN-based HEMTs , 2009, Microelectron. Reliab..

[4]  V. Aimez,et al.  Optimized Pre-Treatment Process for MOS-GaN Devices Passivation , 2014, IEEE Electron Device Letters.

[5]  Anthony P. Fattorini,et al.  Channel temperature estimation in GaAs FET devices , 2010, MTT 2010.

[6]  G. De Mey,et al.  A shortcut to inverse Fourier transforms: Approximate reconstruction of transient heating curves from sparse frequency domain data , 2010 .

[7]  Bruce M. Paine,et al.  Measurement of Temperature in GaN HEMTs by Gate End-to-End Resistance , 2016, IEEE Transactions on Electron Devices.

[8]  R. Quéré,et al.  An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR , 2007, IEEE Transactions on Microwave Theory and Techniques.

[9]  M. Kuball,et al.  Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices , 2008, IEEE Electron Device Letters.

[10]  S. Decoutere,et al.  Experimental Benchmarking of Electrical Methods and $\mu $ -Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs , 2016, IEEE Transactions on Electron Devices.

[11]  E. Wang,et al.  Transient thermal dynamics of GaN HEMTs , 2016, 2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).

[12]  D.B. Estreich.  A DC technique for determining GaAs MESFET thermal resistance , 1989, Fifth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium.

[14]  M. Kuball,et al.  Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy , 2007, IEEE Electron Device Letters.

[15]  Sukwon Choi,et al.  The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs , 2013, IEEE Transactions on Electron Devices.