Composition determination of β-(AlxGa1−x)2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction

We demonstrate X-ray-diffraction-based composition estimation of β-(AlxGa1−x)2O3 coherently grown on (010) β-Ga2O3. The relation between the strain along the [010] direction and the Al composition of the β-(AlxGa1−x)2O3 layer was formulated using the stress–strain relationship in the monoclinic system. This formulation allows us to estimate the Al composition using the out-of-plane lattice spacing determined by conventional X-ray ω–2θ measurements. This method was applied to molecular-beam-epitaxy-grown coherent β-(AlxGa1−x)2O3/Ga2O3 heterostructures, and the Al composition in β-(AlxGa1−x)2O3 agrees closely with the composition determined directly by atom probe tomography.

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