Effect of the Si Õ SiO 2 interface on self-diffusion of Si in semiconductor-grade SiO 2
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A. Fujiwara | U. Gösele | H. Kageshima | M. Uematsu | S. Fukatsu | Tomonori Takahashi | Kohei M. Itoha
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A. Fujiwara | U. Gösele | H. Kageshima | M. Uematsu | S. Fukatsu | Tomonori Takahashi | Kohei M. Itoha