When characterizing an extreme ultraviolet (EUV) lithographic optical system, visible light interferometry is limited to measuring wave front aberration caused by surface figure error while failing to measure wave front errors induced by the multilayer coatings. This necessitates the development of interferometric techniques at an EUV camera’s operational wavelength (at‐wavelength testing), which is typically around 13 nm. While a laser plasma source (LPS) is being developed as a lithography production source, it has generally been considered that only an undulator located at a synchrotron facility can provide the necessary laserlike point source brightness for EUV interferometry. Although an undulator‐based approach has been successfully demonstrated, it would be advantageous to test a camera in its operational configuration with an LPS. We are developing the latter approach by utilizing extended source size schemes to provide usable flux throughput. A slit mounted at the source plane can provide the nec...