Accelerated Publication: Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament

We investigated the resistive switching properties of a amorphous carbon-based ReRAM device. In order to minimize the fluctuations of switching parameters, we introduced an external load resistor (R"L"o"a"d) in series, which indirectly acts as a current limiter. Reduced reset current (I"r"e"s"e"t) and improved switching uniformity were obtained when the proper external R"L"o"a"d was connected. The voltage drop at the ReRAM device during switching was directly monitored using an oscilloscope. We have confirmed that fluctuation of the effective voltage applied across the conducting filament was dramatically reduced by adding R"L"o"a"d. In contrast, we observed degradation of retention characteristic of sample with R"L"o"a"d. To meet both switching uniformity and retention characteristics, we need to optimize the resistance of low resistance state.

[1]  M. Aoki,et al.  Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET , 2008, IEEE Transactions on Electron Devices.

[2]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface , 2004, cond-mat/0409657.

[3]  Jan Genoe,et al.  CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode , 2007 .

[4]  H. Hwang,et al.  Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications , 2008 .

[5]  Kris Myny,et al.  Organic CuTCNQ integrated in complementary metal oxide semiconductor copper back end-of-line for nonvolatile memories , 2006 .

[6]  Hyunsang Hwang,et al.  Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications , 2009, IEEE Electron Device Letters.

[7]  D. Ielmini,et al.  Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory , 2009, IEEE Transactions on Electron Devices.

[8]  Kenji Taniguchi,et al.  A new soft breakdown model for thin thermal SiO/sub 2/ films under constant current stress , 1999 .

[9]  D. Ielmini,et al.  Resistance transition in metal oxides induced by electronic threshold switching , 2009 .

[10]  U-In Chung,et al.  Improvement of resistive memory switching in NiO using IrO2 , 2006 .

[11]  B. Kahng,et al.  Random Circuit Breaker Network Model for Unipolar Resistance Switching , 2008 .

[12]  D. Ielmini,et al.  Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory , 2009, IEEE Electron Device Letters.

[13]  Hyunsang Hwang,et al.  Investigation of State Stability of Low-Resistance State in Resistive Memory , 2010, IEEE Electron Device Letters.

[14]  P. Zhou,et al.  Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode , 2008, IEEE Electron Device Letters.