High-temperature failure of GaN LEDs related with passivation
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U. Zehnder | U. Strauss | F. Rossi | M. Meneghini | G. Meneghesso | E. Zanoni | L. Trevisanello | M. Pavesi
[1] G. Salviati,et al. Temperature and current dependence of the optical intensity and energy shift in blue InGaN-based light-emitting diodes: comparison between electroluminescence and cathodoluminescence , 2006 .
[2] Sergey Bychikhin,et al. Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes , 2005 .
[3] G. Scamarcio,et al. Degradation mechanisms of GaN-based LEDs after accelerated DC current aging , 2002, Digest. International Electron Devices Meeting,.
[4] A. A. Allerman,et al. Drift, diffusion, and trapping of hydrogen in p-type GaN , 2002 .
[5] Alan Francis Wright,et al. Theoretical description of H behavior in GaN p-n junctions , 2001 .
[6] William R. Wampler,et al. Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment , 2001 .
[7] Hiroyuki Ota,et al. The activation of Mg in GaN by annealing with minority-carrier injection , 1998 .