The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed

We report photoreflectance investigations of the energy-fine structure of GaInNAs∕GaAs multiple quantum wells (MQWs) grown at different temperatures and postgrown treated by rapid thermal annealing (RTA). A “splitting” of the ground and excited QW transitious due to the presence of different nitrogen nearest-neighbor environments, i.e., N‐Ga4−mInm(0⩽m⩽4) short-range-order clusters, has been observed. The RTA induces a nitrogen redistribution between the five possible N‐Ga4−mInm configurations and thus leads to a blueshift of QW transitions. The magnitude of the blueshift and its dependence on the growth temperature and annealing temperature are investigated in this paper.

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