论文信息 - Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs - 字舞流文

Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs

Bo Zhang | J. Hartmann | S. Mantl | Qing-Tai Zhao | Yi Zhao | D. Buca | Wenjie Yu | Xi Wang | C. Liu | W. Wu | Z. Xue | M. Chen