论文信息 - Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates - 字舞流文

Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates

S. Denisov | A. Kudrin | V. Shengurov | V. Trushin | A. Zaitsev | V. Chalkov | M. Dorokhin | A. Zdoroveishchev | Yurii Buzynin | M. Ved | D. Filatov | D. Prokhorov