论文信息 - Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F

Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F

In this paper we present a new 2D finite element compound semiconductor device simulator H2F suited for simulation of the parasitic effects in recess gate MESFETs and HEMTS. Several simulation examples of real devices fabricated in the Nanoelectronics Research Centre at the University of Glasgow illustrates the usefulness of the adopted finite element approach.

Asen Asenov | N. Cameron | S. P. Beaumont | John R. Barker | Dave Reid

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