New features of hot intraband luminescence for fast timing

Abstract Intraband luminescence (IBL) is a prompt emission originating from the radiative intraband transitions of charge carriers during thermalisation. Despite its low intensity, IBL can hopefully enhance scintillation time resolution, for instance, in positron emission tomography. The continuous and structureless spectrum of IBL spans over the whole transparency region of a material. Exploiting a wide spectral sensitivity range of our instrumentation (0.77–10.6 eV), we have discovered a strong rise of IBL spectral yield in the NIR region in all studied compounds, which could not be explained within the available theoretical models of IBL. We have developed a new model attributing the NIR rise of the IBL spectrum to the phonon-assisted electron transitions within a single parabolic energy band, which yields a fair correspondence to our experimental data.

[1]  Michael Albrow,et al.  Tests of timing properties of silicon photomultipliers , 2010 .

[2]  Optical and luminescence characterization of LiBaAlF6 single crystals , 2015 .

[3]  M. Abdrakhmanov,et al.  Intraband luminescence in ionic crystals , 1992 .

[4]  Benjamin Frisch,et al.  Time of flight positron emission tomography towards 100ps resolution with L(Y)SO: An experimental and theoretical analysis , 2013 .

[5]  V. Baryshnikov,et al.  Femtosecond mechanisms of electronic excitations in crystalline materials , 2005 .

[6]  A. Lushchik,et al.  Electron and hole intraband luminescence in complex metal oxides , 2003 .

[7]  E. Feldbach,et al.  Fast intrinsic emission with the participation of oxyanion and cation excitations in metal sulphates , 2005 .

[8]  Yiping Shao,et al.  A new timing model for calculating the intrinsic timing resolution of a scintillator detector , 2007, Physics in medicine and biology.

[9]  P. Jarron,et al.  NINO: an ultrafast low-power front-end amplifier discriminator for the time-of-flight detector in the ALICE experiment , 2004, IEEE Transactions on Nuclear Science.

[10]  D. Vaisburd,et al.  Two types of fundamental luminescence of ionization-passive electrons and holes in optical dielectrics—Intraband-electron and interband-hole luminescence (theoretical calculation and comparison with experiment) , 1997 .

[11]  L. Nagli,et al.  Intraband luminescence of CsI crystal , 1989 .

[12]  A. Vasil’ev,et al.  Multiscale Approach to Estimation of Scintillation Characteristics , 2014, IEEE Transactions on Nuclear Science.

[13]  Y. Onodera.  Energy Bands in CsI , 1968 .

[14]  Band tail absorption saturation in CdWO4 with 100 fs laser pulses. , 2013, Journal of physics. Condensed matter : an Institute of Physics journal.

[15]  Raynald Gauvin,et al.  Win X-ray: A New Monte Carlo Program that Computes X-ray Spectra Obtained with a Scanning Electron Microscope , 2005, Microscopy and Microanalysis.

[16]  H. Li,et al.  Refractive index of alkali halides and its wavelength and temperature derivatives , 1976 .

[17]  Roger G. Williams,et al.  Electronic band structures of the scheelite materials --- CaMoO_4, CaWO_4, PbMoO_4, and PbWO_4. , 1998 .

[18]  A combined high-pressure experimental and theoretical study of the electronic band-structure of scheelite-type AWO4 (A = Ca, Sr, Ba, Pb) compounds , 2011, 1107.3014.

[19]  E. Auffray,et al.  Time resolution deterioration with increasing crystal length in a TOF-PET system , 2014 .

[20]  C. R. Elliott,et al.  Near Infrared Absorption Spectra of Silica: OH Overtones , 1971 .

[21]  M. Kirm,et al.  Defect creation caused by the decay of cation excitons and hot electron–hole recombination in wide-gap dielectrics , 2006 .

[22]  F. Savikhin,et al.  Intraband luminescence spectra of insulators and semiconductors excited by pulsed electron beams or electric fields , 1997 .

[23]  A. Bril',et al.  Quantum Efficiency Standard for Ultraviolet and Visible Excitation , 1976 .

[24]  M. Shaw,et al.  Ab initio study of CsI and its surface , 2006 .

[25]  Chin‐Yi Tsai,et al.  Theoretical model for intravalley and intervalley free-carrier absorption in semiconductor lasers: beyond the classical Drude model , 1998 .

[26]  Maurizio Conti,et al.  State of the art and challenges of time-of-flight PET. , 2009, Physica medica : PM : an international journal devoted to the applications of physics to medicine and biology : official journal of the Italian Association of Biomedical Physics.

[27]  M. Moszynski,et al.  Scintillation Properties of Undoped CsI and CsI Doped With CsBr , 2008, IEEE Transactions on Nuclear Science.

[28]  M. Kirm,et al.  Dependence of the efficiency of various emissions on excitation density in BaF2 crystals , 2001 .

[29]  “Instantaneous” spectrum of passively ionized electrons in a dielectric irradiated by a high-power electron beam , 1996 .

[30]  Paul Lecoq,et al.  Can Transient Phenomena Help Improving Time Resolution in Scintillators? , 2014, IEEE Transactions on Nuclear Science.

[31]  Study of oriented CdWO4 scintillating crystals using synchrotron radiation , 2001 .