Electronic states in B δ-doped Si quantum well

This work presents a self-consistent calculation of the electronic structure of B δ-doped Si quantum well. By examining the dependence of the energy levels, the Fermi level and the depth of the well with the impurity concentration, it is shown that the model is valid for impurity concentration not higher than 1 x 10 14 cm -2 and that the Fermi level is very close to the valence band. Calculations are compared with experimental data obtained for p 2D = 2.4 x 10 13 cm -2 , 3.5 x10 13 cm -2 , and 9.5 x l0 13 cm -2 . The results agree quite well with the experimental results available for this system.

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