High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
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M. Sopanen | J. Oksanen | H. Jussila | J. Riikonen | H. Lipsanen | A. Varpula | A. Perros | M. Bosund | T. Huhtio | P. Mattila