Site‐competition epitaxy for superior silicon carbide electronics

We present and discuss a novel dopant control technique for compound semiconductors, called site‐competition epitaxy, which enables a much wider range of reproducible doping control and affords much higher and lower epilayer doping concentrations than was previously possible. Site‐competition epitaxy is presented for the chemical vapor deposition of 6H‐SiC epilayers on commercially available (0001)SiC silicon‐face substrates. Results from utilizing site‐competition epitaxy include the production of degenerately doped SiC epilayers for ohmic‐as‐deposited (i.e., unannealed) metal contacts as well as very low doped epilayers for electronic devices exhibiting SiC record‐breaking reverse voltages of 300 and 2000 V for 3C‐ and 6H‐SiC p‐n junction diodes, respectively.