Study on the optical property of P-C doped a-Si:H thin films

Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Carbon (C) were deposited by plasma enhanced chemical vapor deposition (PECVD). The influence of carbon on the optical property and the content of hydrogen and carbon in the P-doped a-Si:H films were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry and Fourier-transform infrared spectroscopy, respectively. The results show that the C-Si bonds in the P-C doped a-Si:H thin films can be observed clearly, and the content of hydrogen and carbon as well as the optical band gap increases with increasing CH4 gas flow rate, but the refractive index decreases with increasing CH4 gas flow rate in the CVD chamber.

[1]  J. Ziman.  Principles of the Theory of Solids , 1965 .

[2]  Jerome J. Cuomo,et al.  Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering , 1977 .

[3]  Antonio Tepore,et al.  Physical characterization of halogenated and hydrogenated amorphous silicon films , 1980 .

[4]  Elena Maria Tresso,et al.  Optical properties of hydrogenated amorphous silicon , 1986 .

[5]  Nelson,et al.  Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon. , 1992, Physical review. B, Condensed matter.

[6]  Kang-Cheng Lin,et al.  The structural and optical properties of a‐SiNx:H prepared by plasma‐enhanced chemical‐vapor deposition , 1992 .

[7]  Joseph Shinar,et al.  Raman study of the network disorder in sputtered and glow discharge a‐Si:H films , 1995 .

[8]  Robert A. Street,et al.  Amorphous silicon area detectors for protein crystallography , 1995, Electronic Imaging.

[9]  F. C. Loh,et al.  Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films , 1998 .

[10]  Ivan Pelant,et al.  Silicon-based materials for optoelectronics: visible photoluminescence and electroluminescence from amorphous silicon , 1999, Photonics Prague.

[11]  Neal R. Butler,et al.  Recent developments in uncooled IR technology , 2000, Defense, Security, and Sensing.

[12]  Sandesh Jadkar,et al.  Influence of silane flow on structural, optical and electrical properties of a-Si:H thin films deposited by hot wire chemical vapor deposition (HW-CVD) technique , 2002 .