The measurement, use and interpretation of the temperature coefficient of resistance of metallizations

Abstract A review is given of the measurement and use of the temperature coefficient of resistance (TCR) of Al-based metallizations used as electrical interconnects in microelectronic circuits. The TCR has various reliability-related applications in the measurement of temperature and the characterization of a metallization for its susceptibility to electromigration failure and for the magnitude of its residual resistivity. Applications reviewed include the characterization of wafer-level test stations.